高頻同步降壓 NexFET? 功率級
| VDS (V) | 25 |
| Power loss (W) | 2.6 |
| Ploss current (A) | 25 |
| Configuration | PowerStage |
| ID - continuous drain current at Ta=25degC (A) | 40 |
| Package (mm) | QFN 5 x 6 proprietary footprint |
| Operating temperature range (C) | -55 to 150 |
- 90% System Efficiency at 25A
- High Frequency Operation (Up To 2MHz)
- Incorporates Power Block Technology
- High Density – SON 5-mm × 6-mm Footprint
- Low Power Loss 2.6W at 25A
- Ultra Low Inductance Package
- System Optimized PCB Footprint
- 3.3V and 5V PWM Signal Compatible
- 3-State PWM Input
- Integrated Bootstrap Diode
- Pre-Bias Start-Up Protection
- Shoot Through Protection
- RoHS Compliant – Lead Free Terminal Plating Halogen Free
- APPLICATIONS
- Synchronous Buck Converters
- Multiphase Synchronous Buck Converters
- POL DC-DC Converters
- Memory and Graphic Cards
- Desktop and Server VR11.x and VR12 V-Core
Synchronous Buck Converters
The CSD96370Q5M NexFET Power Stage is an optimized design for use in a high power, high density Synchronous Buck converter. This product integrates an enhanced gate driver IC and Power Block Technology to complete the power stage switching function. This combination produces a high current, high efficiency, high speed switching device and delivers an excellent thermal solution in a small 5-mm × 6-mm outline package due to its large ground based thermal pad. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.
