--- 產品詳情 ---
采用 5mm x 6mm SON 封裝的單路、3.3mΩ、25V、N 溝道 NexFET? 功率 MOSFET
VDS (V) | 25 |
Configuration | Single |
Rds(on) max at VGS=4.5 V (mOhms) | 3.3 |
Rds(on) max at VGS=10 V (mOhms) | 2.4 |
IDM - pulsed drain current (Max) (A) | 200 |
QG typ (nC) | 13.3 |
QGD typ (nC) | 3.5 |
QGS typ (nC) | 5.3 |
Package (mm) | SON5x6 |
VGS (V) | 16 |
VGSTH typ (V) | 1.6 |
ID - silicon limited at Tc=25degC (A) | 100 |
ID - package limited (A) | 100 |
Logic level | Yes |
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Point-of-Load Synchronous Buck Converter for Applications in
Networking, Telecom and Computing Systems - Optimized for Synchronous FET Applications
- Point-of-Load Synchronous Buck Converter for Applications in
NexFET is a trademark of Texas Instruments.
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications.
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