采用 3mm x 3mm SON 封裝的單路、12.4mΩ、25V、N 溝道 NexFET? 功率 MOSFET
| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) max at VGS=4.5 V (mOhms) | 12.4 |
| Rds(on) max at VGS=10 V (mOhms) | 8.2 |
| IDM - pulsed drain current (Max) (A) | 90 |
| QG typ (nC) | 4 |
| QGD typ (nC) | 1 |
| QGS typ (nC) | 2.1 |
| Package (mm) | SON3x3 |
| VGS (V) | 16 |
| VGSTH typ (V) | 2 |
| ID - silicon limited at Tc=25degC (A) | 60 |
| ID - package limited (A) | 60 |
| Logic level | Yes |
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications.
