The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temperature sensor measures the local die temperature of the MAX1385/MAX1386. A 12-bit ADC converts the programmable- gain amplifier (PGA) outputs, external/internal temperature readings, and two auxiliary inputs.

The two gate-drive channels, each consisting of 8-bit coarse and 10-bit fine DACs and a gate-drive amplifier, generate a positive gate voltage to bias the LDMOS devices. The MAX1385 includes a gate-drive amplifier with a gain of 2 and the MAX1386 gate-drive amplifier provides a gain of 4. The 8-bit coarse and 10-bit fine DACs allow up to 18 bits of resolution. The MAX1385/MAX1386 include autocalibration features to minimize error over time, temperature, and supply voltage.

The MAX1385/MAX1386 feature an I2C/SPI?-compatible serial interface. Both devices operate from a 4.75V to 5.25V analog supply (3.2mA supply current), a 2.7V to 5.25V digital supply (3.1mA supply current), and a 4.75V to 11.0V gate-drive supply (4.5mA supply current). The MAX1385/MAX1386 are available in a 48-pin thin QFN package.